Fast Spin-Orbit Qubit in an Indium Antimonide Nanowire
نویسندگان
چکیده
منابع مشابه
Fast spin-orbit qubit in an indium antimonide nanowire.
Because of the strong spin-orbit interaction in indium antimonide, orbital motion and spin are no longer separated. This enables fast manipulation of qubit states by means of microwave electric fields. We report Rabi oscillation frequencies exceeding 100 MHz for spin-orbit qubits in InSb nanowires. Individual qubits can be selectively addressed due to intrinsic differences in their g factors. B...
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A double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. The spectrum of two-electron eigenstates is investigated using electric dipole spin resonance. Singlet-triplet level repulsion caused by spin-orbit interaction is observed. The size and the anisotropy of singlet-triplet repulsion are used to determine the magnitude and the orientation of the spin...
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A semiconductor nanowire quantum dot with strong spin-orbit coupling (SOC) can be used to achieve a spin-orbit qubit. In contrast to a spin qubit, the spin-orbit qubit can respond to an external ac electric field, an effect called electric-dipole spin resonance. Here we develop a theory that can apply in the strong SOC regime. We find that there is an optimal SOC strength η(opt)=√2/2, where the...
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We elaborate on a number of issues concerning our recent proposal for spin-qubit manipulation in nanowires using the spin-orbit coupling. We discuss the experimental status and describe in further detail the scheme for single-qubit rotations. We present a derivation of the effective two-qubit coupling which can be extended to higher orders in the Coulomb interaction. The analytic expression for...
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The photo-Hall technique has been used to investigate the properties of the InSb optical absorption band-edge. An accurate theoretical explanation of the linear absorption results is given, together with new data on the nonlinear aspects of the band-tail. A value of 1.1 x 10-18 for a has been calculated by monitoring the carrier generation during bistability.
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2013
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.110.066806